Classifying Pulse Compression Radar Waveforms Using Time-Frequency Distributions

Jarmo Lundén, Visa Koivunen, Liisa Terho

Nanoscale Research Letters · 2005 · 14 citations · 7 references

Concepts

Abstract

In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH<sub>4</sub> and B<sub>2</sub>H<sub>6</sub> precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the performance of devices featuring ALD W using SiH<sub>4</sub> is superior to that of devices featuring ALD W using B<sub>2</sub>H<sub>6</sub>. This disparity in device performance results from different metal gate-induced strain from ALD W using SiH<sub>4</sub> and B<sub>2</sub>H<sub>6</sub> precursors, i.e. tensile stresses for SiH<sub>4</sub> (~2.4 GPa) and for B<sub>2</sub>H<sub>6</sub> (~0.9 GPa).

References

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