High‐ <i>Q</i> and temperature‐stable microwave dielectrics in layer cofired Zn _1.01 Nb ₂ O ₆ /TiO ₂ /Zn _1.01 Nb ₂ O ₆ ceramic architectures

Abstract

Abstract A multilayer cofired architecture was proposed and demonstrated to achieve high‐ Q and temperature‐stable microwave dielectrics in a derived system, Zn 1.01 Nb 2 O 6 ‐TiO 2 . This approach could effectively allow the chemical reactions between Zn 1.01 Nb 2 O 6 and TiO 2 occur at a rather narrow area (~12 μm), the interfaces of heterogeneous layers, where the diffusion of Zn, Nb, and Ti could be observed. Such interfaces could act as the in situ “glues” to connect each layer well. The effects of stacking scheme and TiO 2 content on the microwave dielectric properties of layered architectures were investigated systematically. The resonant frequency, Q ‐factor, and electric field distribution were reported using the eigenmode solver of high‐frequency structure simulator. Among the available layer architectures, the optimized microwave dielectric characteristic was observed in Zn 1.01 Nb 2 O 6 /TiO 2 /Zn 1.01 Nb 2 O 6 stacked with 0.058 mol TiO 2 (~1.84 vol%). The τ f can be effectively tuned to approximately +0.53 ppm/°C, and importantly, a high Q × f value ~99 500 GHz together with ε r ~26.8 was achieved. This design could be beneficial for opening up new ways to develop high‐performance microwave dielectrics based on current material systems and therefore to meet with the high requirements for 5G wireless communication components and multilayer packing technology.