Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy

Substrates for gallium nitride epitaxy

L. Liu, James H. Edgar · Materials Science and Engineering R Reports · 2002 · 809 citations

Engineering, Materials Engineering, Materials Science +12

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Tomoya Sugahara, Hisao Satô, Maosheng Hao et al. · Japanese Journal of Applied Physics · 1998 · 469 citations

Engineering, Materials Engineering, Materials Science +17

Wide-bandgap semiconductor materials: For their full bloom

Shizυo Fujita · Japanese Journal of Applied Physics · 2015 · 371 citations · Full text

Engineering, Materials Engineering, Materials Science +17

GaN Substrates for III-Nitride Devices

Tanya Paskova, Drew Hanser, K. R. Evans · Proceedings of the IEEE · 2009 · 162 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Michał Boćkowski, Małgorzata Iwińska, Mikolaj Amilusik et al. · Semiconductor Science and Technology · 2016 · 147 citations

Natural Sciences, Materials Engineering, Materials Science +17