Publication | Closed Access
Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO<sub>2</sub> films obtained from metal halide and amide precursors
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Citations
71
References
2018
Year
EngineeringThin Film Process TechnologyChemistryChemical DepositionAmide PrecursorsEpitaxial GrowthThin Film ProcessingMaterials ScienceChemical Vapor DepositionComparative StudySurface CharacterizationElectronic MaterialsDifferent Hf PrecursorsSurface ScienceApplied PhysicsMetal HalideFilm GrowthThin FilmsExperimental StudiesSurface Reactivity
Theoretical and experimental studies were performed on surface reactions during film growth and electrical properties of HfO<sub>2</sub> using two different Hf precursors, HfCl<sub>4</sub> and Hf(N(CH<sub>3</sub>)<sub>2</sub>)<sub>4</sub>.
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