Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO<sub>2</sub> films obtained from metal halide and amide precursors

Il‐Kwon Oh, Bo‐Eun Park, Seunggi Seo, Byung Chul Yeo, Jukka T. Tanskanen, Han‐Bo‐Ram Lee, Woo‐Hee Kim, Hyungjun Kim

Journal of Materials Chemistry C · 2018 · 56 citations · 71 references

Concepts

Abstract

Theoretical and experimental studies were performed on surface reactions during film growth and electrical properties of HfO<sub>2</sub> using two different Hf precursors, HfCl<sub>4</sub> and Hf(N(CH<sub>3</sub>)<sub>2</sub>)<sub>4</sub>.

References

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