Perspective: Magnetoelectric switching in thin film multiferroic heterostructures

Abstract

Since the resurgence of multiferroics research, significant advancement has been made in the theoretical and experimental investigation of the electric field control of magnetization, magnetic anisotropy, magnetic phase, magnetic domains, and Curie temperature in multiferroic heterostructures. As a result of these advances, multiferroic heterostructures are on a trajectory to impact spintronics applications through the significantly reduced energy consumption per unit area for magnetization switching (1–500 μJ cm−2) when compared to that of current-driven magnetization switching (0.2–10 mJ cm−2). Considering this potential impact, it becomes necessary to understand magnetoelectric switching dynamics and characteristic switching times. The body of experimental work investigating magnetoelectric switching dynamics is rather limited, with the majority of room temperature converse magnetoelectric switching measurements reported having employed relatively long voltage pulses. Recently, however, the field has started to consider the kinetics of the switching path in multiferroic (and ferroelectric) switching. Excitingly, the results are challenging our understanding of switching processes while offering new opportunities to engineer the magnetoelectric effect. Considering the prospects of multiferroics for beyond-CMOS applications and the possible influence on operational speed, much remains to be understood regarding magnetoelectric switching kinetics and dynamics, particularly at reduced dimensions and under the influence of boundary effects resulting from strain, electrostatics, and orientation. In this article, we review magnetoelectric switching in multiferroic heterostructures for the electric field control of magnetism. We then offer perspectives moving toward the goal of low energy-delay spintronics for computational applications.