Single antiferromagnetic skyrmion transistor based on strain manipulation

Abstract

Magnetic skyrmions are envisioned as ideal candidates as information carriers for future spintronic devices, which have attracted a great deal of attention in recent years. In this paper, we design a spintronic device based on antiferromagnetic skyrmions, which is a single antiferromagnetic skyrmion transistor. The transistor consists of a source, a skyrmion island, a barrier region, and a drain. The barrier region is controlled by strains. We demonstrate the feasibility of the transistor by micromagnetic simulations. We find that the number of skyrmions that can pass the barrier region can be controlled by adjusting the strength of strain in the barrier region and the current density. In an appropriate current-strain region, skyrmions can flow from the skyrmion island to the drain one by one. This mechanism offers a promising route for designing tunable skyrmionic-mechanic devices.