Publication | Closed Access
Epitaxial growth of composite scintillators based on Tb<sub>3</sub>Al<sub>5</sub>O<sub>12</sub> : Ce single crystalline films and Gd<sub>3</sub>Al<sub>2.5</sub>Ga<sub>2.5</sub>O<sub>12</sub> : Ce crystal substrates
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Citations
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References
2018
Year
Materials ScienceMaterial AnalysisEngineeringPhysicsCrystal Growth TechnologyScintillatorApplied PhysicsComposite ScintillatorsCe GarnetCe Crystal SubstratesEpitaxial GrowthCrystallographyLpe Growth Method
The composite scintillators based on the single crystalline films of TbAG : Ce garnet and GAGG : Ce crystal substrates was developed using the LPE growth method for simultaneous registration of α-particles and γ-quanta in mixed ionizing fluxes.
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