Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe₂ Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Abstract

Abstract 2D materials beyond molybdenum disulfide such as molybdenum ditelluride (MoTe 2 ) have attracted increasing attention because of their distinctive properties, such as phase‐engineered, relatively narrow direct bandgap of 1.0–1.1 eV and superior carrier transport. However, a wafer‐scale synthesis process is required for achieving practical applications in next‐generation electronic devices using MoTe 2 thin films. Herein, the direct growth of atomically thin 1T′, 1T′–2H mixed, and 2H phases MoTe 2 films on a 4 in. SiO 2 /Si wafer with high spatial uniformity (≈96%) via metal–organic vapor phase deposition is reported. Furthermore, the wafer‐scale phase engineering of few‐layer MoTe 2 film is investigated by controlling the H 2 molar flow rate. While the use of a low H 2 molar flow rate results in 1T′ and 1T′–2H mixed phase MoTe 2 films, 2H phase MoTe 2 films are obtained at a high H 2 molar flow rate. Field‐effect transistors fabricated with the prepared 2H and 1T′ phases MoTe 2 channels reveal p‐type semiconductor and semimetal properties, respectively. This work demonstrates the potential for reliable wafer‐scale production of 1T′ and 2H phases MoTe 2 thin films employing the H 2 molar flow rate‐controlled phase tunable method for practical applications in next‐generation electronic devices as a p‐type semiconductor and Wyle semimetal.