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Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS<sub>2</sub>/Au structure for multilevel flexible memory
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Citations
42
References
2018
Year
Electrical EngineeringReversible AlternationEngineeringElectronic MemoryEmerging Memory TechnologyApplied PhysicsCondensed Matter PhysicsQuantum MaterialsVoltage-polarity-controlled Multilevel MemoryMemory DeviceMultilevel Flexible MemorySemiconductor MemoryMicroelectronicsNew Operating SchemeUnipolar Resistive Switching
A new operating scheme for voltage-polarity-controlled multilevel memory based on Ag/MoS<sub>2</sub>/Au flexible structure with reversible alternation between bipolar and unipolar resistive switching modes was demonstrated.
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