High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors

Abstract

Nonpolar <italic>a</italic>-plane GaN-based metal-semiconductor–metal UV PDs, with high responsivity and low dark current, were made from <italic>a</italic>-plane GaN epitaxial films grown on <italic>r</italic>-plane sapphire by controlling the dislocation density.