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(Cd,Zn,Mg)Te-based microcavity on MgTe sacrificial buffer: Growth, lift-off, and transmission studies of polaritons
12
Citations
34
References
2018
Year
EngineeringTe-based MicrocavitySemiconductor NanostructuresSemiconductorsIi-vi SemiconductorPolariton DynamicOptical PropertiesCompound SemiconductorTransmission StudiesNanophotonicsMaterials SciencePhotoluminescencePhysicsNanotechnologyMgte Sacrificial BufferMicrocavity QualityOptoelectronicsIi-vi Semiconductor MicrocavitiesApplied PhysicsQuantum Photonic DeviceIi-vi Microcavity
Opaque substrates precluded, so far, transmission studies of II-VI semiconductor microcavities. This work presents the design and molecular beam epitaxy growth of semimagnetic (Cd,Zn,Mn)Te quantum wells embedded into a (Cd,Zn,Mg)Te-based microcavity, which can be easily separated from the GaAs substrate. Our lift-off process relies on the use of a MgTe sacrificial layer which stratifies in contact with water. This allowed us to achieve a II-VI microcavity prepared for transmission measurements. We evidence the strong light-matter coupling regime using photoluminescence, reflectivity, and transmission measurements at the same spot on the sample. By comparing a series of reflectance spectra before and after lift-off, we prove that the microcavity quality remains high. Thanks to Mn content in quantum wells we show the giant Zeeman splitting of semimagnetic exciton-polaritons in our transmitting structure.
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