Surface‐Passivated Cesium Lead Halide Perovskite Quantum Dots: Toward Efficient Light‐Emitting Diodes with an Inverted Sandwich Structure

Abstract

Abstract In recent years, metal‐halide perovskite quantum dots (QDs) have been broadly applied in optoelectronic fields due to their fascinating characteristics, such as high photoluminescence quantum yields, tunable bandgaps, and low‐cost solution processing. Here, a facile ligand‐exchange strategy is employed for the fabrication of CsPbBr 3 QDs capped with di‐dodecyl dimethyl ammonium bromide. It is demonstrated that the treated QDs' film becomes more compact with higher electron mobility and shorter lifetime. Besides, a reduced conduction band minimum value (0.28 eV) of perovskite QDs' film provides an efficient electron injection to them from ZnO nanoparticles. Through using the well‐passivated QDs' film, electroluminescence QD light‐emitting diode (QLED) devices with an indium tin oxide/ZnO/CsPbBr 3 QDs/MoO 3 /4, 4′‐bis(carbazole‐9‐yl)biphenyl/Al inverted sandwich structure are achieved. The as‐prepared QLED device exhibits a maximum current efficiency of 0.62 cd A −1 and an external quantum efficiency of 0.58%, which is nearly nine times higher than that of the device based on unmodified QDs. More importantly, the stability testing results demonstrate that the QLED can be operated for more than 20 min under ambient conditions without any encapsulation. This provides an alternative route for highly efficient perovskite‐based LED with inverted sandwich structures.