Publication | Closed Access
Gate-tunable interfacial properties of in-plane ML MX<sub>2</sub> 1T′–2H heterojunctions
72
Citations
48
References
2018
Year
Semiconductor TechnologyElectrical EngineeringEngineeringElectronic MaterialsPhysicsElectronic EngineeringApplied PhysicsGate VoltageGate-tunable Interfacial PropertiesMultilayer HeterostructuresSemiconductor Device FabricationMicroelectronicsSchematic DiagramSemiconductor Device
Schematic diagram of p-type Ohmic contact procedure with the help of the deeply expanded MIGS under a gate voltage for the in-plane ML MX<sub>2</sub> 1T′–2H heterojunctions.
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