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Thermal-Induced Dielectric Switching with 40K Wide Hysteresis Loop Near Room Temperature

49

Citations

27

References

2018

Year

Abstract

A thermal-induced dielectric switching has been realized in two ion-pair crystal [C<sub>2</sub>H<sub>6</sub>N<sub>5</sub>]<sup>+</sup>·[H<sub>2</sub>PO<sub>4</sub>]<sup>-</sup> (1, C<sub>2</sub>H<sub>6</sub>N<sub>5</sub> = 3,5-diamino-1,2,4-triazolinium) through single-crystal-to-single-crystal phase transition (SCSC-PT). Upon cooling from room temperature, the 1D cation stripes that are composed of [C<sub>2</sub>H<sub>5</sub>N<sub>5</sub>]<sup>+</sup> cations have undergone a 90° sharp rotation around the c axis, accompanied by the transition of crystal stacking from loose unparallel (dynamic state) to compression parallel (static state) and reorientation of dipoles on the [C<sub>2</sub>H<sub>5</sub>N<sub>5</sub>]<sup>+</sup> cation, which thus resulted in high dielectric state to low dielectric state transformation. While on the warming run, the reverse process was rather sluggish, resulting in a reversible dielectric switching with ultralarge (about 40K wide) hysteresis loop near room temperature. It is thought that the large-sized polar cation stripes have a predominant influence on the switching properties of 1.

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