Publication | Closed Access
Interfacial electronic states and self-formed p–n junctions in hydrogenated MoS<sub>2</sub>/SiC heterostructure
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Citations
51
References
2018
Year
EngineeringSelective DopingSemiconductor NanostructuresSelf-formed P–n JunctionsQuantum MaterialsMaterials ScienceOxide HeterostructuresSemiconductor TechnologyPhysicsSemiconductor MaterialLayered MaterialP–n JunctionsTransition Metal ChalcogenidesElectronic MaterialsGreat ChallengeApplied PhysicsCondensed Matter PhysicsMultilayer HeterostructuresInterfacial Electronic States
It is difficult to generate p–n junctions in atomically thin transition metal dichalcogenides (TMDs) because of the great challenge of selective doping.
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