Publication | Open Access
Tuning Anti-Klein to Klein Tunneling in Bilayer Graphene
57
Citations
45
References
2018
Year
Gapped Bilayer GrapheneEngineeringSpin-charge ConversionBilayer GrapheneQuantum EngineeringSemiconductorsGraphene NanomeshesStaneneElectronic DevicesPerfect Klein TunnelingTunneling MicroscopyGraphene-based Nano-antennasQuantum MaterialsMaterials ScienceQuantum ScienceKlein TunnelingPhysicsSpintronicsApplied PhysicsCondensed Matter PhysicsGrapheneQuantum DevicesGraphene Nanoribbon
We show that in gapped bilayer graphene, quasiparticle tunneling and the corresponding Berry phase can be controlled such that they exhibit features of single-layer graphene such as Klein tunneling. The Berry phase is detected by a high-quality Fabry-Pérot interferometer based on bilayer graphene. By raising the Fermi energy of the charge carriers, we find that the Berry phase can be continuously tuned from 2π down to 0.68π in gapped bilayer graphene, in contrast to the constant Berry phase of 2π in pristine bilayer graphene. Particularly, we observe a Berry phase of π, the standard value for single-layer graphene. As the Berry phase decreases, the corresponding transmission probability of charge carriers at normal incidence clearly demonstrates a transition from anti-Klein tunneling to nearly perfect Klein tunneling.
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