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Uniform Tellurium Doping in Black Phosphorus Single Crystals by Chemical Vapor Transport
59
Citations
34
References
2018
Year
Tellurium-doped Black PhosphorusEngineeringCrystal Growth TechnologyUniform Tellurium DopingChemistryChemical EngineeringPhosphoreneChemical Vapor TransportMaterials SciencePhysicsCrystal MaterialSemiconductor MaterialBlack PhosphorusElectrochemical ProcessPyroelectricityElectrochemistryBp Single CrystalsNatural SciencesApplied PhysicsCondensed Matter Physics
Doping has been a reliable way to improve the properties of black phosphorus (BP). However, a uniform and large amount of doping in BP remains a challenge. Herein, the synthesis of tellurium-doped black phosphorus (Te-doped BP) single crystals with high crystalline quality is achieved by the chemical vapor transport reaction method. The synthetic route enables a uniform and relatively large amount (up to 0.5% atomic ratio) of Te-doping in BP single crystals. The electrocatalytic oxygen evolution reaction (OER) properties of few-layer Te-doped BP nanosheets prepared by liquid exfoliation were also investigated for the first time. Electrochemical tests demonstrated that the OER onset-potential of undoped and Te-doped BP nanosheets was 1.63 and 1.49 V, respectively. The result implies that doping provides an effective route to enhance the electrochemical OER performance of BP.
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