Photoluminescence Characteristics of Multilayer HfSe₂ Synthesized on Sapphire Using Ion Implantation

Abstract

Abstract The multilayer HfSe 2 on sapphire is first fabricated by the ion beam‐assisted process combining ion implantation with the post annealing. The A 1g mode of HfSe 2 is shown in the Raman spectrum, the X‐ray photoelectron spectroscopy results indicate the existence of Hf–Se bonding, and the transmission electron microscopy analysis exactly identifies the crystal structure of HfSe 2 . The six‐layered (6L) octahedral HfSe 2 (1T‐HfSe 2 ), whose band structure is well realized by utilizing photoluminescence spectroscopy compared with the results of the density functional theory calculation, is formed via the Hf selenization during annealing.