Device Geometry Engineering for Controlling Organic Antiambipolar Transistor Properties

Abstract

The key concept behind this study is the use of “geometry engineering” to elucidate the carrier transport path and to control the device properties of organic antiambipolar transistors. Investigations of carrier transport properties with different device geometries, such as the pn-heterojunction length and the channel layer thickness, revealed that charge carriers transported through the lateral edge junction between p- and n-type channels. We also found that the peak voltage was effectively reduced from −49 to −39 V in a device with asymmetric channel lengths. These results suggest that device performance can be enhanced by taking advantage of the designability of the device geometry, which can employ the strong features of organic antiambipolar transistors.