Voltage Control of Antiferromagnetic Phases at Near-Terahertz Frequencies

Abstract

The recent push toward THz sensing, transduction, and memory has created a significant need for materials that operate above ferromagnetic resonance frequencies, which are typically in the low GHz range. Antiferromagnetic materials with THz resonances seem promising, but their lack of a net magnetic moment makes manipulating them difficult. Here a fully coupled magnetomechanical model is developed, showing that antiferromagnetic single domains are controllable via strain coupling. The results indicate that near-THz device response is possible with ultralow power consumption.