Selective fabrication of free-standing ABA and ABC trilayer graphene with/without Dirac-cone energy bands

Abstract

Graphene is a single-layer carbon sheet with a honeycomb structure, and bilayer graphene consists of two graphene sheets with AB stacking. In trilayer graphene, the third graphene sheet has two possible stacking sequences, A or C, when it is overlaid on bilayer graphene. It has been theoretically predicted that trilayer graphene exhibits a variety of novel electronic properties with/without a Dirac-cone band, depending on the stacking sequence. In this regard, trilayer graphene has a high potential for widening the capability of graphene-based electronic devices. However, the difficulty of selective fabrication has hindered the progress of research. Here, we report the first success in the selective fabrication of quasi-free-standing trilayer graphene with ABA or ABC stacking grown epitaxially on hydrogen-terminated silicon carbide. Angle-resolved photoemission spectroscopy (ARPES) clearly demonstrated that our trilayer graphene with ABA stacking has a massless Dirac-like band near the Fermi level, while that with ABC stacking shows a parabolic non-Dirac-like band dispersion. Strict control of temperature and pressure during annealing is shown to be crucial for controllably stacking graphene by a team in Japan. Graphene is a single layer of carbon atoms in a hexagonal arrangement. When two graphene layers are stacked, some carbon atoms in the top layer sit above the center of each hexagon of the lower layer. A third layer either sits directly aligned with the bottom layer (ABA stacking) or is again displaced from the previous two (ABC stacking). These two arrangements exhibit very different properties. Takashi Takahashi from Tohoku University and colleagues deterministically created either ABA or ABC trilayer graphene by first annealing bilayer graphene on a hydrogen-terminated silicon carbide substrate. They found that the alignment of the third layer is determined by the temperature and pressure of this anneal. Quasi-free-standing trilayer graphene with ABA or ABC stacking was selectively synthesized on hydrogen-terminated silicon carbide. The electronic structure was investigated by angle-resolved photoemission spectroscopy. While ABA graphene exhibits a massless Dirac-cone-like band at the K point in the Brillouin zone, ABC graphene was found to show a parabolic non-Dirac-like band. The present success in selective fabrication of ABA and ABC graphene would open a pathway toward graphene-based nano electronic devices with variable layer number and stacking sequence such as high-speed transistor and photodetector.