Publication | Closed Access
Strong Enhancement of PbS Quantum Dot NIR Emission Using Plasmonic Semiconductor Nanocrystals in Nanoporous Silicate Matrix
23
Citations
47
References
2018
Year
Optical MaterialsEngineeringColloidal NanocrystalsOptoelectronic DevicesNear FieldSemiconductorsEmission EnhancementQuantum DotsNanostructure SynthesisNanophotonicsPlasmonic MaterialMaterials ScienceStrong EnhancementNanotechnologyPhotonic MaterialsOptoelectronic MaterialsNanocrystalline MaterialNanomaterialsNir EmissionApplied PhysicsNanoporous Silicate Matrix
Abstract Strong enhancement of near‐infrared (NIR) emission of lead sulfide quantum dots (QDs) induced by Cu 2− x Se semiconductor plasmonic nanocrystals (PNCs), both embedded into nanoporous silicate matrix is reported. The emission enhancement comes from resonant interaction of QD optical transition dipole with the near field of plasmons of semiconductor PNCs. Possible mechanisms of QD photoluminescence broadening and shift, including Rabi splitting and trap‐state‐related photoluminescence enhancement, are considered. As a result, a novel optical luminescent material, which can be used as an efficient source of NIR emission is demonstrated.
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