Effective Carrier‐Concentration Tuning of SnO₂ Quantum Dot Electron‐Selective Layers for High‐Performance Planar Perovskite Solar Cells

Abstract

The carrier concentration of the electron-selective layer (ESL) and hole-selective layer can significantly affect the performance of organic-inorganic lead halide perovskite solar cells (PSCs). Herein, a facile yet effective two-step method, i.e., room-temperature colloidal synthesis and low-temperature removal of additive (thiourea), to control the carrier concentration of SnO₂ quantum dot (QD) ESLs to achieve high-performance PSCs is developed. By optimizing the electron density of SnO₂ QD ESLs, a champion stabilized power output of 20.32% for the planar PSCs using triple cation perovskite absorber and 19.73% for those using CH₃ NH₃ PbI₃ absorber is achieved. The superior uniformity of low-temperature processed SnO₂ QD ESLs also enables the fabrication of ≈19% efficiency PSCs with an aperture area of 1.0 cm² and 16.97% efficiency flexible device. The results demonstrate the promise of carrier-concentration-controlled SnO₂ QD ESLs for fabricating stable, efficient, reproducible, large-scale, and flexible planar PSCs.