Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO₂/Ni Selector Structure

Abstract

The use of a threshold-switching Ni/NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> , uniform current distribution, excellent flexibility, and stable I-V curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.