Low‐Voltage, Optoelectronic CH₃NH₃PbI₃₋<i>_x</i>Cl<i>_x</i> Memory with Integrated Sensing and Logic Operations

TLDR

Nonvolatile optoelectronic memories that combine sensing, data storage, and data processing are promising for IoT, and multifunctional devices with low power consumption and secure storage are highly desirable. The study aims to demonstrate an optoelectronic resistive‑switching memory that integrates sensing and logic operations using CH₃NH₃PbI₃₋ₓClₓ perovskites. The device employs CH₃NH₃PbI₃₋ₓClₓ, exploiting its defect physics and strong light absorption to enable resistive switching. The CH₃NH₃PbI₃₋ₓClₓ cell operates at 0.1 V under illumination, retains data long‑term, supports multiple resistance states, and can perform logic operations with combined electrical and optical inputs, enabling smart sensor applications.

Abstract

Abstract Nonvolatile optoelectronic memories integrated with the functions of sensing, data storage, and data processing are promising for the potential Internet of things (IoT) applications. To meet the requirements of IoT devices, multifunctional memory devices with low power consumption and secure data storage are highly desirable. This study demonstrates an optoelectronic resistive switching memory integrated with sensing and logic operations by adopting organic–inorganic hybrid CH 3 NH 3 PbI 3− x Cl x perovskites, which possess unusual defect physics and excellent light absorption. The CH 3 NH 3 PbI 3− x Cl x cell exhibits low operation voltage of 0.1 V with the assistance of light illumination, long‐term retention property, and multiple resistance states. Its unique optoelectronic characteristics enable to perform logic operation for inputting one electrical pulse and one optical signal, and detect the coincidence of electrical and optical signal as well. This design provides possibilities for smart sensor in IoT application.