2018 · 20 citations · 5 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsMicrowave EngineeringCmos Circuit DesignHigh-frequency Semiconductor DevicesLow-noise Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsRadio-frequency Integrated CircuitsBicmos TechnologyGainGain BandwidthGain-bandwidth ProductLow-noise AmplifiersMaximum GainNoise FigurePower Consumption
A Low-power D-Band Low Noise Amplifier (LNA) manufactured in a recent 130 nm SiGe BiCMOS process for imaging applications is presented. The architecture consists of an optimized 3-stage cascode amplifier which achieves a maximum gain of 32.8 dB and a gain>20 dB in the frequency range from 121 to 161 GHz with a DC power consumption of 39.6 mW. The simulated noise figure varies from 6 to 9.7 dB within the range 130 to 140 GHz. To the best of the author's knowledge, the presented work exhibits the highest gain-bandwidth product with the lowest power consumption for a D-Band amplifier in a 130 nm SiGe technology.
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