Calculations of spin-polarized Goos–Hänchen displacement in magnetically confined GaAs/Al_<i>x</i>Ga_1−<i>x</i>As nanostructure modulated by spin–orbit couplings

Abstract

We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/Al _x Ga_1-x As nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.e. interfacial confining electric field or strain engineering. Based on such a semiconductor nanostructure, a controllable spatial spin splitter can be proposed for spintronics applications.