Concepedia

Publication | Closed Access

Threshold switching selector and 1S1R integration development for 3D cross-point STT-MRAM

DOI

36

Citations

0

References

2017

Year

Hongxin Yang, Xiaojie Hao, Zihui Wang, R. Malmhäll, Huadong Gan, Kimihiro Satoh, Jing Zhang, Dong Ha Jung, Xiaobin Wang, Yuchen Zhou,

Unknown Venue

Abstract

To develop very high density STT-MRAM, 3D cross-point architecture is desirable, which requires a selector integrated with a pMTJ memory element. We present a two terminal bi-directional threshold switching selector based on doped-HfOx materials and integrated one selector/one perpendicular MTJ (1S1R) cross-point device. The selector shows sharp turn-on slope of around 2.8 mV/dec, high On/Off ratio (above 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> ), low on-resistance (∼1 kΩ), low threshold voltage (0.3 V), low holding voltage (0.02 V), fast turn on speed (10 ns), and good thermal stability (400°C). Switching operations between “AP” and “P” state have been demonstrated for the 1S1R STT-MRAM device. This integrated 1S1R enables implementation of the 3D STT-MRAM array for high density memory application.