Publication | Closed Access
A vertically layered MoS<sub>2</sub>/Si heterojunction for an ultrahigh and ultrafast photoresponse photodetector
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Citations
38
References
2018
Year
SemiconductorsPhotonicsElectrical EngineeringExcellent Photoelectric PerformancesEngineeringPhotoelectric SensorPhotodetectorsUltrafast Photoresponse PhotodetectorOptoelectronic MaterialsApplied PhysicsWide BroadbandMultilayer HeterostructuresOptoelectronic DevicesPhotoelectric MeasurementChemistryOptoelectronicsCompound SemiconductorUltrafast Response Speed
The CVD prepared V-MoS<sub>2</sub> heterojunction photodetector exhibits excellent photoelectric performances in a wide broadband with high responsivity, large detectivity, and ultrafast response speed.
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