5G mm-Wave front-end-module design with advanced SOI process

Abstract

In this paper, we first introduce the RF performance of Globalfoundries 45RFSOI process. NFET F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> > 290GHz and F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> >380GHz. Then we present several mm-Wave circuit block designs, i.e., Switch, Power Amplifier, and LNA, based on 45RFSOI process for 5G Front End Module (FEM) applications. For the SPDT switch, insertion loss (IL) <; 1dB at 30GHz with 32dBm P1dB and > 25dBm P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> . For the PA, with a 2.9V power supply, the PA achieves 13.1dB power gain and a saturated output power (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> ) of 16.2dBm with maximum power-added efficiency (PAE) of 41.5% at 24Ghz continuous-wave (CW). With 960Mb/s 64QAM signal, 22.5% average PAE, -29.6dB EVM, and -30.5dBc ACLR are achieved with 9.5dBm average output power.