Publication | Open Access
Anti-site defect effect on the electronic structure of a Bi<sub>2</sub>Te<sub>3</sub> topological insulator
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Citations
28
References
2018
Year
Materials ScienceSemiconductorsEpitaxial GrowthMolecular-beam EpitaxyTopological MaterialsPhysicsEngineeringTopological InsulatorCondensed Matter PhysicsQuantum MaterialsApplied PhysicsTopological MaterialFermi LevelThin FilmsMolecular Beam EpitaxyAnti-site Defect EffectElectronic StructureTopological Heterostructures
Tuning the Fermi level (<italic>E</italic><sub>F</sub>) in Bi<sub>2</sub>Te<sub>3</sub> topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE).
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