Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection

Abstract

Topological protection in hybrid semiconductor-superconductor materials largely relies on the hybrid electronic properties. This paper presents growth and characterization of epitaxial InAs${}_{1\ensuremath{-}x}$Sb${}_{x}$/Al nanowires where both composition and crystal structure of the semiconductor is varied. Among the findings are a strong spin-orbit coupling at intermediate compositions, large effective $g$ factors, induced hard-gap superconductivity in nanowires with both zincblende and wurtzite structure, and signatures of topological superconductivity