2017 · 49 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringWireless CommunicationsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsPower AmplifiersRadio-frequency Integrated CircuitsClass E AmplifiersDoherty Power AmplifiersGainGallium Nitride Power AmplifiersGan-based High-frequency DevicesHigh-gain AmplifiersIntegrated Passive DevicesRadio Frequency Power Amplifiers
This paper presents a high gain ultra-compact Doherty PA design approach based on 28 V two-stage GaN MMICs. A 20 W asymmetric and 26 W symmetric Doherty amplifier operating in the 3.4-3.6 GHz band were designed into a small footprint 7×7 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> QFN plastic package for 5G massive MIMO base station applications. The use of package-integrated low-loss passive devices to realize the class-E like inverted Doherty combiner resulted in excellent final stage drain efficiencies of 60 % at 8 dB output power back-off and 65 % in saturation, to the best of the authors' knowledge the highest reported final stage drain efficiency for GaN MMIC based integrated Doherty PAs in the 3.5 GHz band. The full asymmetric PA board yields a measured line-up efficiency of 43 % with an associated gain of 26 dB at 35 dBm average power of a 20 MHz LTE signal, corresponding to 8 dB output power back-off.
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A highly linear dual-band Doherty power amplifier for femto-cell base stations
Seunghoon Jee, Yunsik Park, Yunsung Cho et al. · 2015 · 17 citations