Design Growth of MAPbI₃ Single Crystal with (220) Facets Exposed and Its Superior Optoelectronic Properties

Abstract

MAPbI₃ is deemed as the most prominent member in hybrid perovskites family because of its extremely optoelectronic properties. However, some issues and puzzles are still in expectation of their answers, such as stabilities, hysteresis, ferroelectricity, and so on. To bridge the distinctions between MAPbI₃ single crystal and thin films, large-size single crystals are demanded. On the contrary, crystal structure anisotropy-dependent optoelectronic properties is an inevitable topic. A series of large-size MAPbI₃ single crystals with (220) facets exposed were successfully grown, using high concentration solutions and large-size seed crystals to match growth rates of (100) and (220) facets. The optoelectronic properties of photocurrents, responsivity, EQE, and detectivity clearly showed significant anisotropy of optoelectronic properties in MAPbI₃ single crystal. According to ion migration theory, the anisotropy of optoelectronic properties was interpreted. We hope this result will be helpful to guide oriented growth MAPbI₃ thin films.