ACS Nano · 2017 · 75 citations · 49 references
Natural SciencesChemistryMaterials ScienceNanomaterialsOptical MaterialsSemiconductor MaterialsCarrier TransportOptical Properties Of SemiconductorsQuantum DotsSemiconductor InterfacesSemiconductor NanomaterialsSemiconductor PhysicsCarrier RecombinationConductionOptoelectronic PropertiesPhotoluminescencePhotoluminescence SpectroscopyTime-resolved Photoluminescence SpectroscopyTransient Absorption SpectroscopyValence Band Structure
Colloidal Cu + -doped CdSe/CdS core/shell semiconductor nanocrystals (NCs) are investigated in their as-prepared and degenerately n -doped forms using time-resolved photoluminescence and transient-absorption spectroscopies. Photoluminescence from Cu +:CdSe/CdS NCs is dominated by recombination of delocalized conduction-band (CB) electrons with copper-localized holes. In addition to prominent bleaching of the first excitonic absorption feature, transient-absorption measurements show bleaching of the sub-bandgap copper-to-CB charge-transfer (ML CB CT) absorption band and also reveal a photoinduced midgap valence-band (VB)-to-copper charge-transfer (L VB MCT) absorption band that extends into the near-infrared, as predicted by recent computations. The photoluminescence of these NCs is substantially diminished upon introduction of excess CB electrons via photodoping. Time-resolved photoluminescence measurements reveal that the ML CB CT excited state is still formed upon photoexcitation of the n -doped Cu +:CdSe/CdS NCs, but its luminescence is quenched by a fast (picosecond) three-carrier trap-assisted Auger recombination process involving two CB electrons and one copper-bound hole.
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Surface-Enhanced Emission from Single Semiconductor Nanocrystals
Kouichi Shimizu, Wing-Keung Woo, Brent Fisher et al. · Physical Review Letters · 2002 · 592 citations
Electronic Impurity Doping in CdSe Nanocrystals
Ayaskanta Sahu, Moon Sung Kang, Alexander Kompch et al. · Nano Letters · 2012 · 367 citations · Full text