Realization of synaptic learning and memory functions in Y₂O₃based memristive device fabricated by dual ion beam sputtering

Abstract

Single synaptic device with inherent learning and memory functions is demonstrated based on a forming-free amorphous Y₂O₃ (yttria) memristor fabricated by dual ion beam sputtering system. Synaptic functions such as nonlinear transmission characteristics, long-term plasticity, short-term plasticity and 'learning behavior (LB)' are achieved using a single synaptic device based on cost-effective metal-insulator-semiconductor (MIS) structure. An 'LB' function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems. The realization of key synaptic functions in a cost-effective MIS structure would promote much cheaper synapse for artificial neural network.