Publication | Closed Access
High-performance self-powered deep ultraviolet photodetector based on MoS<sub>2</sub>/GaN p–n heterojunction
211
Citations
41
References
2017
Year
SemiconductorsPhotonicsElectrical EngineeringElectronic DevicesEngineeringWide-bandgap SemiconductorPhotodetectorsHigh SensitivityNanoelectronicsSemiconductor TechnologyCompound SemiconductorApplied PhysicsGan Power DeviceOptoelectronic DevicesCategoryiii-v SemiconductorOptoelectronicsDeep-uv LightHeterojunction Photodetectors
Self-powered MoS<sub>2</sub>/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.
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