Enhancement of 2G HTS Coil Stability With V2O3 and Perforated HTS Wire

Abstract

In this paper, we propose an improved wire structure that easily causes current bypass when the vanadium (III) oxide (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) material is applied turn-to-turn in 2G HTS no-insulation coils. A characteristic of the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> material is that when a quench causes the coil temperature to rise the turn-to-turn resistance is lowered and current is bypassed. However, due to the high material resistance of the original 2G HTS wire, the turn-to-turn resistance is large and the resulting amount of bypassed current is small. Therefore, in order to reduce the turn-to-turn resistance of the original 2G HTS coil, a short sample test of the perforated wire was performed. We also applied the proposed method to the coil and verified its validity through experimental results.