Heatsink-less Quasi 3-level flying capacitor inverter based on low voltage SMD MOSFETs

Abstract

Outstanding efficiencies can be achieved by the utilization of the latest technology of low voltage, SMD-packaged Si- or GaN-based semiconductors. These devices allow a heatsink- and fan-less converter design, thus lightweight and high power density converters are typically derived. This paper investigates the advantages of using these relatively low cost SMD-packaged devices in medium power industrial applications. A Quasi 3-level Flying-Capacitor topology is proposed. A cost-performing map is presented in order to verify the benefits of designing this system with low voltage Si- or GaN-based MOSFETs against the latest 650 V IGBTs and 900 V SiC MOSFETs. Finally, a heatsink-less 3.3 kW single-phase inverter prototype implementing 150 V SMD-packaged Si MOSFETs was designed and successfully tested.