Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory

Abstract

Abstract The crystal grain size of CH 3 NH 3 PbI 3 (MAPbI 3 ) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI 3 OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in 2 storage capacity, >600 cycles endurance, >10 4 s data retention time, ~0.7 V set, and ~−0.61 V re-set bias voltage.