Monolithic III-nitride photonic integration toward multifunctional devices

Abstract

The multiple functionalities of III-nitride semiconductors enable the integration with different components into a multicomponent system with enhanced functions. Here, we propose to fabricate and characterize a monolithic InGaN photonic circuit of a transmitter, waveguide, and receiver on an III-nitride-on-silicon platform. Both the transmitter and the receiver, sharing identical InGaN/GaN multiple-quantum-well structures and fabrication procedures, work to emit light and detect light independently. The 8 μm wide and 200 μm long InGaN waveguide couples the modulated light from the transmitter and sends the guided light to the receiver, leading to the formation of an in-plane light transmission system. The induced photocurrent at the receiver is highly sensitive to the light output of the transmitter. Multi-dimensional light transmissions are experimentally demonstrated at 200 Mb/s. These multifunctional photonic circuits open feasible approaches to the development of III-nitride multicomponent systems with integrated functions for comprehensive applications in the visible region.