2017 · 22 citations · 6 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsMicrowave EngineeringCmos Circuit DesignHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMixed-signal Integrated Circuit DesignRadio-frequency Integrated CircuitsBicmos TechnologyIntegrated Circuit MixersMicrowave ReceiversMillimeter-wave Integrated CircuitsMixer CircuitsMixersRf Cmos DesignSige Bicmos Design
A 300 MHz-12 GHz HBT-based mixer-first receiver in 130 nm BiCMOS is presented. The mixer core is composed of four SiGe HBTs driven by quadrature LO pulses with a shared emitter RF input and feedback from the baseband to HBT bases to generate baseband-to-RF impedance-transparency. This is analogous to effects seen in CMOS passive-mixer-first receivers, but at higher frequencies than attainable with traditional CMOS topologies. LO circuitry is also implemented in emitter-coupled logic to generate 25% duty-cycle LO pulses capable of driving the high frequency mixer, which achieves a measured out-of-band 1 dB compression point of+10dBm at 9 GHz.
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