Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors - Concepedia

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Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

111

Citations

26

References

2017

Year

Bon‐Cheol Ku, Yawar Abbas, A.S. Sokolov, Changhwan Choi

Journal of Alloys and Compounds

Electrical EngineeringEngineeringAld Hfo2-based RramInterface EngineeringApplied PhysicsUniform Switching BehaviorsSemiconductor MemoryMicroelectronicsPhase Change Memory

References

	Year	Citations

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