Reconfigurable back enhanced (BE) SOI MOSFET used to build a logic inverter

Abstract

This paper reports the characteristics and the operation of the new BE SOI MOSFET used to build a logic inverter for the first time. The main characteristics of this device is its simplicity of fabrication and the reconfigurable behavior, i.e, it can act as a n-type transistor or as a p-type transistor depending on the back gate bias. Furthermore, an inverter circuit was built and the static response was measured. The BE SOI inverter showed a characteristic CMOS inverter curve. Finally, the threshold voltage variation with the silicon and gate oxide thickness is explored in order to find the best inverter circuit design.