Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers

Abstract

We demonstrate a narrow-linewidth heterogeneously integrated Si/III-V laser, where the current confinement in the III-V structure is obtained by oxide isolation rather than by the prevailing ion-implantation technique. This method provides effective electrical isolation as well as III-V surface passivation, and a pathway for high-efficiency diode injection laser performance. This method also offers increased compatibility with potentially high-temperature annealing processes. The lasers shown here possess a threshold current of as low as 60 mA and a single-facet output power of more than 3 mW at 20 °C. A linewidth of 28 kHz at 1574.8 nm is obtained at a current of 200 mA (I = 3.3 × I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ). Single-mode operation is achieved with a side-mode suppression ratio larger than 55 dB.