Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition - Concepedia

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Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition

14

Citations

35

References

2017

Year

Ludovico Megalini, Brian C. Cabinian, Hongwei Zhao, Douglas C. Oakley, John E. Bowers, Jonathan Klamkin

Journal of Electronic Materials

Materials ScienceEpitaxial GrowthEngineeringApplied PhysicsSilicon SubstratesMolecular Beam EpitaxySilicon On InsulatorMicroelectronicsOptoelectronicsCompound Semiconductor

References

	Year	Citations

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