Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial - Concepedia

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Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial

DOI Full Paper Access

38

Citations

12

References

2017

Year

Jianqiu Guo, Yu Yang, Balaji Raghothamachar, Taejin Kim, Michael Dudley, Jungyu Kim

Journal of Crystal Growth

EngineeringApplied PhysicsCondensed Matter PhysicsCarbideDefect FormationDefect ToleranceTriangular Defects

References

	Year	Citations

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