Broadband, Ultrafast, Self‐Driven Photodetector Based on Cs‐Doped FAPbI₃ Perovskite Thin Film

Abstract

Abstract In this study, a high‐performance photodetector comprised of formamidinium cesium lead iodide (FA 1− x Cs x PbI 3 ) thin film is developed. The Cs‐doped FAPbI 3 perovskite material is synthesized through a simple spin‐coating method, via which FA 1− x Cs x PbI 3 with different Cs doping levels ( x = 0.1, 0.15, 0.2, and 0.3) can be obtained. Further optoelectronic characterization reveals that the FA 0.85 Cs 0.15 PbI 3 photodetector exhibits reproducible sensitivity to irradiation with wavelengths in the range from 240 to 750 nm, whereas it is weakly sensitive to wavelengths longer than 750 nm. The responsivity and specific detectivity are estimated to be around 5.7 A W −1 and 2.7 × 10 13 cm Hz 1/2 W –1 , respectively. It is also worth noting that the present perovskite photodetector demonstrates an ultrafast response speed ( t r / t f : 45 ns/91 ns) at zero bias voltage, which is probably related to the ultrafast lifetime and high quality of thin film according to the Hall effect study. Finally, this device shows a weak degradation in sensitivity to white light after storage at ambient condition for 45 days. The totality of the broadband sensitivity, high specific detectivity, ultrafast response speed, and self‐driven property renders the FA 1− x Cs x PbI 3 an idea material for high‐performance photodetectors application.