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Effect of AlN layer on the resistive switching properties of TiO2 based ReRAM memory devices

Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringNanoelectronicsApplied PhysicsMemory DeviceMemory DevicesSemiconductor MemoryResistive Switching PropertiesMicroelectronicsPhase Change MemoryReram Memory DevicesAln Layer