Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon

Abstract

The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of 8.7×10¹⁶ cm^-3) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm^-1 and a pulse duration of 700 fs. A huge transmittance enhancement of ∼90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5-3.1 MV cm^-1.